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Parameters:

  • Model:UPA860TD
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:10000
  • Min Order:100
  • Mark/silk print/code/type:VV
  • Package:SOT-763

V(BR) CBO

Collector-Base Voltage

 Q1/Q2=9V / 9V

V(BR) CEO

Collector-Emitter Voltage

 Q1/Q2=6V / 3V
Collector Current(IC)  Q1/Q2=30MA /35MA
Transtion Frequency(fT)  Q1/Q2=12GHZ / 20GHZ
DC Current Gain(hFE)  Q1/Q2=75~150 / 50~100

VCE (sat)

Collector-Emitter Saturation Voltage

 
Power Dissipation (Pd)  210MW
Description & Applications  NPN SILICON RF TRANSISTOR 
 2 different built-in transistors (2SC5435, 2SC5786)
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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UPA860TD
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