| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/-500mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 0.27KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 5KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.054 |
| 直流电流增益hFE DC Current Gain(hFE) | 60/20 |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features •silicon NPN epitaxial planar type(Tr1) silicon PNP epitaxial planar type(Tr2) •two elements incorporated into one package (transistors with built-in resistor) •reduction of the mounting area and assembly cost by one half |
| 描述与应用 | 特点 •NPN硅外延平面型（TR1）硅PNP外延平面型（TR2） •两个元素纳入一个封装中（内置电阻的晶体管） •减少安装面积和装配成本的一半 |