| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | 150MHz/80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80/30 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/-250mV |
| 耗散功率Pc Power Dissipation | 150mW |
| Description & Applications | Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package.(Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.) • Reduction of the mounting area and assembly cost by one half. Applications • For switching/digital circuits |
| 描述与应用 | 特点 •NPN硅外延的刨床晶体管（TR1） 硅PNP外延刨床晶体管的（TR2） •两个要素纳入一包装（晶体管内置电阻，TR1捕集器连接到TR2基地）。 •减少安装面积和汇编一半的费用。 应用 •对于开关/数字电路 |