| Q1 Collector-Base Voltage(VCBO) |
50V |
| Q1Collector-Emitter Voltage(VCEO) |
50V |
| Q1 Collector Current(IC) |
100MA |
| Q2 Collector-Base Voltage(VCBO) |
-50V |
| Q2Collector-Emitter Voltage(VCEO) |
-50V |
| Q2Collector Current(IC) |
-100MA/-0.1A |
| Q1 Input Resistance(R1) |
4.7KΩ |
| Q1Base-Emitter Resistance(R2) |
|
| Q1(R1/R2) Q1 Resistance Ratio |
|
| Q2 Input Resistance(R1) |
4.7KΩ |
| Q2Base-Emitter Resistance(R2) |
|
| Q2(R1/R2) Q2 Resistance Ratio |
|
| DC Current Gain(hFE) Q1/Q2 |
160~460 / 160~460 |
| Transtion Frequency(fT) Q1/Q2 |
150MHZ / 80MHZ |
| Power Dissipation |
150MW/0.15W |
| Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Two elements incorporated into one package.
(Transistors with built-in resistor)
UNR1216(UN1216) + UNR1116(UN1116)
|