最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V |
最大漏极电流Id
Drain Current | -2.3A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 200mΩ@ VGS = 4.5V, ID = 1.6A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.7V |
耗散功率Pd
Power Dissipation | 1.1W |
| Description & Applications | DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Low on-resistance · Fast switching speed · Low threshold · Low gate drive · SOT23-6 package APPLICATIONS · DC - DC Converters · Power Management Functions · Disconnect switches · Motor control |
| 描述与应用 | 说明 Zetex的新一代高密度的MOSFET采用了独特的 结构，结合快速开关的低导通电阻的好处 速度。这使得它们成为理想的高效率，低电压，功率 管理应用程序。 特点 ·低导通电阻 ·快速开关速度 ·低门槛 ·低栅极驱动器 ·SOT23-6封装 应用 ·DC - DC转换器 ·电源管理功能 ·隔离开关 ·电机控制 |