| 三极管BJT类型 TYPE | PNP |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | -150mA |
| 三极管BJT截止频率fT Transtion Frequency(fT) | 80MHz |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | -2mA |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | -0.1~-0.3V |
| 二极管DIODE类型 TYPE | 快恢复-单管 Fast Recovery Diode-Single |
| 二极管DIODE反向电压VR Reverse Voltage | 80V |
| 二极管DIODE正向整流电流Io Rectified Current | 100mA |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | 0.9V |
| 耗散功率Pc Power Dissipation | 100mW |
| Description & Applications | Features •EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE •Including two(TR, Diode) devices in USV.(Ultra Super Mini type with 5 leads) •Simplify circuit design. •Reduce a quantity of parts and manufacturing process. •GENERAL PURPOSE APPLICATION. •ULTRA HIGH SPEED SWITCHING APPLICATION. |
| 描述与应用 | 特点 •外延平面PNP晶体管的硅外延平面型二极管 •包括两名（TR，二极管）器件在USV（超超级迷你型5脚）。 •简化电路设计。 •减少了部件数量和制造工艺。 •通用应用。 •超高速开关应用。 |