集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC
Collector Current(IC) | 600mA/0.6A |
截止频率fT
Transtion Frequency(fT) | 250Mhz |
直流电流增益hFE
DC Current Gain(hFE) | 20~300 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 400mV~750mV |
耗散功率Pc
Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ® As complementary type, the PNP transistor MMBT4403 is recommended. ® This transistor is also available in the TO-92 case with the type designation 2N4401. |
| 描述与应用 | NPN硅外延平面晶体管 开关和放大器应用。 ®作为互补型，PNP 晶体管MMBT4403推荐。 ®这种晶体管的TO-92的情况下，也可以在 类型指定2N4401。 |