| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| Q1基极输入电阻R1 Input Resistance(R1) | 215MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 350 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 120mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 900mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • Super SOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR • Low Equivalent On Resistance • Low Saturation Voltage • IC=1A Continuous Collector Current • SOT23-6 package APPLICATIONS • LCD Backlighting inverter circuits • Boost functions in DC-DC converters |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •超级SOT双50V NPN硅低饱和开关晶体管 •低等效电阻 •低饱和电压 •IC= 1A连续集电极电流 •SOT23-6封装 应用 •LCD背光逆变器电路 •升压DC-DC转换器的功能 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |