集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 45V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 300MHz |
直流电流增益hFE
DC Current Gain(hFE) | 110~220 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 200~600 mV |
耗散功率Pc
Power Dissipation | 310mW/0.31W |
| Description & Applications | Features • These transistors are subdivided into three groups (A, B, and C) according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. |
| 描述与应用 | 特点 这些晶体管被细分为三组（A，B，和C），根据其电流增益。 BC846是不同的，在组A和B，然而，类型BC847和BC848可以提供在所有三个组。 BC849是一款低噪声型可在B和C组作为互补类型，PNP晶体管BC856... BC859建议。 •NPN硅外延平面晶体管开关和AF放大器应用。 •尤其适用于自动插入厚薄膜电路。 |