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Parameters:

  • Model:2SJ506STR
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:J506
  • Package:TO-252/DPAK

最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-10A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.065Ω @-5A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.0V
耗散功率Pd
Power Dissipation
20W
Description & ApplicationsFeatures • Low on-resistance RDS(on)= 0.065 Ω typ. (at VGS = –10V, ID = 5A) • Low drive current • High speed switching • 4V gate drive devices.
描述与应用•低导通电阻 RDS(ON)=0.065Ω(典型值)。 VGS=10V,ID=-5A) •低驱动电流 •高速开关 •4V栅极驱动装置

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SJ506STR
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