2SD2216J-Q NPN Transistors(BJT) 60V 100mA/0.1A 150MHz 160 ~ 260 100mV/0.1V SOT-523/SC-75 marking YQ general amplifier|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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2SD2216J-Q NPN Transistors(BJT) 60V 100mA/0.1A 150MHz 160 ~ 260 100mV/0.1V SOT-523/SC-75 marking YQ general amplifier

Inventory:270000 Min Order：10

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Model：2SD2216J-Q
Manufacturer：HUABAN
Date Code：08NOPB+10NOPB
Standard Package：3000
Min Order：10
Mark/silk print/code/type：YQ
Package：SOT-523/SC-75

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	50V
集电极连续输出电流IC Collector Current(IC)	100mA/0.1A
截止频率fT Transtion Frequency(fT)	150MHz
直流电流增益hFE DC Current Gain(hFE)	160 ~ 260
管压降VCE（sat） Collector-Emitter Saturation Voltage	100mV/0.1V
耗散功率Pc Power Dissipation	125mW/0.125W
Description & Applications	Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)
描述与应用	NPN硅外延平面型对于一般的放大互补2SB1462J的特点 •高正向电流传输比HFE •低集电极 - 发射极饱和电压VCE（sat）

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