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Parameters:

  • Model:2SK2552B
  • Manufacturer:HUABAN
  • Date Code:07nopb 07+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:CH
  • Package:SOT-523/SC-75/USM

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.21~0.35ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.37~-1v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•JUNCTION FIELD EFFECT TRANSISTOR •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone
描述与应用•结型场效应晶体管 •N沟道硅结型场效应晶体管 •低噪音: -108.5 dB(典型值)。 (VDD= 2.0 V,C= 5 pF的,RL=2.2kΩ上) •特别适用于音频和电话

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK2552B
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