集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −60V |
集电极连续输出电流IC
Collector Current(IC) | −600mA/- 0.6A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -400mV/-0.4V |
耗散功率Pc
PoWer Dissipation | 1.2W |
| Description & Applications | SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. |
| 描述与应用 | 表面贴装 PNP硅晶体管 产品描述： 该中央半导体CXT2907A的类型是PNP硅晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，小信号通用开关应用而设计制造。 |