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Parameters:

  • Model:2SA1729S
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:AGS
  • Package:SOT-89/PCP/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
-1.5A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
140~280
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
1.3W
Description & ApplicationsPNP epitaxial planar silicon transistor High-speed switching application adoption of FBET process; low collector-to-emitter saturation voltage; fast switching speed; large current capacity
描述与应用PNP外延平面硅晶体管 高速开关应用 采纳的FBET过程; 低集电极 - 发射极饱和电压; 开关速度快; 大电流容量

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA1729S
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