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  • Model:VEC2402
  • Manufacturer:HUABAN
  • Date Code:08NOPB
  • Standard Package:
  • Min Order:10
  • Mark/silk print/code/type:BH
  • Package:VEC8

最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
4A
源漏极导通电阻Rds
Drain-Source On-State Resistance
48mΩ@ VGS = 10V, ID = 2000mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1.0~2.4V
耗散功率Pd
Power Dissipation
1W
Description & ApplicationsN-Channel Silicon MOSFET General-Purpose Switching Device Features • The best suited for inverter applications. • Low ON-resistance. • Composite type facilitating high-density mounting. • 4V drive. • Mounting high 0.75mm.
描述与应用N-沟道硅MOSFET 通用开关设备 特点 •逆变器应用最适合。 •低导通电阻。 •复合型,促进高密度安装。 •4V驱动器。 •安装高0.75毫米。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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VEC2402
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