| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| Q1基极输入电阻R1 Input Resistance(R1) | 200MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 2000 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1300mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1500mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 ... BSP62 (PNP) |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •NPN硅达林顿晶体管 •高集电极电流 •低集电极 - 发射极饱和电压 •互补类型：BSP60... BSP62（PNP） |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |