集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 120~240 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 600mV/0.6V |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN general purpose transistor FEATURES • High current • Low voltage • Low collector-emitter saturation voltage APPLICATIONS • General purpose switching and amplification, especially for portable equipment. |
| 描述与应用 | NPN通用晶体管 特点 •高电流 •低电压 •低集电极 - 发射极饱和电压 应用 •通用开关和放大，特别是用于便携式设备。 |