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Parameters:

  • Model:TND731E4
  • Manufacturer:HUABAN
  • Date Code:04+ 04+
  • Standard Package:8000
  • Min Order:100
  • Mark/silk print/code/type:AT
  • Package:ECSP1208-4

最大源漏极电压Vds
Drain-Source Voltage
最大栅源极电压Vgs(±)
Gate-Source Voltage
最大漏极电流Id
Drain Current
源漏极导通电阻Rds
Drain-Source On-State
Resistance
开启电压Vgs(th)
Gate-Source Threshold Voltage
耗散功率Pd
Power Dissipation
Description & ApplicationsP-Channel Silicon MOSFET Electret Condenser Microphone Applications Ultrasmall package permitting applied sets to be small and slim Especially suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristics Excellent noise characteristics
描述与应用P-沟道硅MOSFET 驻极体电容式麦克风应用 超小封装允许应用设置小巧玲珑 特别适合于使用在驻极体电容传声器的音响设备和电话 优秀的电压特性 卓越的噪声特性

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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TND731E4
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