集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 150mA/0.15A |
截止频率fT
Transtion Frequency(fT) | 1.5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 80 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 1W |
| Description & Applications | NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain. |
| 描述与应用 | 1 GHz的宽带晶体管NPN 说明 为SOT89塑料外壳，用于在厚薄膜电路的NPN晶体管。该晶体管具有极其良好的互调性能和高功率增益。 |