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Parameters:

  • Model:BC858C
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:3L
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−30V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
420~800
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-250mV/-0.25V
耗散功率Pc
PoWer Dissipation
310mW/0.31W
Description & ApplicationsPNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC858 and BC859 can be supplied in all three groups. The BC859 is a low noise type. As complementary types, the NPN transistors BC846 … BC849 are recommended
描述与应用PNP硅外延平面晶体管开关和AF放大器应用。 特别适用于自动插入厚薄膜电路。 这些晶体管被分为三组,A,B和C根据其电流增益。不同BC856是可用的,在组A和B,然而,类型BC857,BC858和BC859可以提供在所有三个组。 BC859是一款低噪声类型。 作为互补类型,NPN晶体管BC846... BC849建议

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BC858C
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