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  • Model:ECH8649-S-TL-H
  • Manufacturer:HUABAN
  • Date Code:07NOPB 07+ROHS
  • Standard Package:3000
  • Min Order:100
  • Mark/silk print/code/type:WT
  • Package:ech8

最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V
最大漏极电流Id
Drain Current
7.5A
源漏极导通电阻Rds
Drain-Source On-State Resistance
26mΩ@ VGS = 2.5V, ID = 2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.5~1.3V
耗散功率Pd
Power Dissipation
1.4W
Description & ApplicationsN-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Best suited for LiB charging and discharging switch. • Common-drain type. • Halogen free
描述与应用N-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •2.5V驱动。 •最适合LIB充电和放电开关。 •共漏型。 •无卤

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