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Parameters:

  • Model:TPCF8104
  • Manufacturer:HUABAN
  • Date Code:0827ROHS 06
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:F3D
  • Package:1206-8/vs-8/SOT23-8

最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
28mΩ@ VGS = -10V, ID = -3A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8~-2.0V
耗散功率Pd
Power Dissipation
2.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
描述与应用东芝场效应晶体管硅P沟道MOS类型(U-MOSⅣ) 笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RDS(ON)= 21mΩ(典型值) •高正向转移导纳:| YFS|= 9.6 S(典型值) •低漏电流:IDSS= -10μA(最大)(VDS=-30 V) •增强模式:Vth= -0.8到-2.0 V (VDS=-10 V,ID=-1MA)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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TPCF8104
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