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Parameters:

  • Model:2SK4041-E1-A
  • Manufacturer:HUABAN
  • Date Code:06+NOPB 07+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:DF
  • Package:4pXSLP04/1006

最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.15~0.24ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.37~-1v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR •High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super Low noise −115 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
描述与应用•N沟道硅结型场效应晶体管 •高增益 -1.0分贝(VDS=2.0 V,C =5 pF的,RL=2.2kΩ的) •超低噪音 -115分贝(VDS=2.0 V,C =5 pF的,RL=2.2kΩ上)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK4041-E1-A
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