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Parameters:

  • Model:FDJ128N
  • Manufacturer:HUABAN
  • Date Code:05+NOPB 05+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:B
  • Package:SOT-363/SC70-6/TSSOP6/SC-88

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current550mA/0.55A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance35Ω/Ohm @5.5A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation1.6W
Description & ApplicationsN-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely ow RDS(ON) • Compact industry standard SC75-6 surface mount package
描述与应用N沟道2.5 VGS指定的PowerTrench MOSFET 概述 这N沟道2.5V指定的MOSFET采用飞兆半导体先进的低电压的PowerTrench过程。 它已被优化的电池电源管理应用。 •5.5 A,20 V。 RDS(ON)= 35MΩ@ VGS= 4.5 V RDS(ON)= 51MΩ@ VGS= 2.5 V •低栅极电荷 •高性能沟道技术极流的RDS(ON) •紧凑型工业标准SC75-6表面贴装封装

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FDJ128N
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