集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -350V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -350V |
集电极连续输出电流IC
Collector Current(IC) | −500mA/-0.5A |
截止频率fT
Transtion Frequency(fT) | 40~200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 20~200 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor High Voltage Transistor FEATURE We declare that the material of product compliance with RoHS requirements. |
| 描述与应用 | PNP外延平面晶体管 高电压晶体管 特写 我们声明，产品符合RoHS要求的材料。 |