| Collector-Base Voltage(VCBO) Q1/Q2 |
50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V |
| Collector Current(IC) Q1/Q2 |
100mA |
| Q1 Input Resistance(R1) |
47KΩ |
| Q1 Base-Emitter Resistance(R2) |
47KΩ |
| Q1(R1/R2) Q1 Resistance Ratio |
1 |
| Q2 Input Resistance(R1) |
47KΩ |
| Base-Emitter Resistance(R2) |
47KΩ |
| (R1/R2) Q2 Resistance Ratio |
1 |
| DC Current Gain(hFE) Q1/Q2 |
80/80 |
| Transtion Frequency(fT) Q1/Q2 |
150MHZ/150MHZ |
| Power Dissipation Q1/Q2 |
125MW/0.125W |
| Description & Applications |
Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half. |