| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -30V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.213 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •High forward current transfer ratio hFE •Costs can be reduced through downsizing of the equipment and reduction of the number of parts •S-Mini type package, allowing automatic insertion through tape packing and magazine packing |
| 描述与应用 | 特点 •内置电阻 •硅外延刨床PNP晶体管 •高正向电流传输比HFE晶体管 •成本可降低通过减员设备和减少部件的数量 •S-迷你型包装，允许通过自动插入磁带包装盒包装 |