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Parameters:

  • Model:UNR5154GOL
  • Manufacturer:HUABAN
  • Date Code:08+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:EV
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-30V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-30V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.213
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)80MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & Applications Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •High forward current transfer ratio hFE •Costs can be reduced through downsizing of the equipment and reduction of the number of parts •S-Mini type package, allowing automatic insertion through tape packing and magazine packing
描述与应用特点 •内置电阻 •硅外延刨床PNP晶体管 •高正向电流传输比HFE晶体管 •成本可降低通过减员设备和减少部件的数量 •S-迷你型包装,允许通过自动插入磁带包装盒包装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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UNR5154GOL
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