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Parameters:

  • Model:MA3SD29FGL
  • Manufacturer:HUABAN
  • Date Code:08NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:M5R
  • Package:SOT-523

反向电压Vr
Reverse Voltage
30V
平均整流电流Io
AVerage Rectified Current
75mA
最大正向压降VF
Forward Voltage(Vf)
420mV/0.42V
最大耗散功率Pd
Power dissipation
Description & Applications• Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For super high speed switching circuits • Low forward voltage VF : < 0.42 V (at IF = 100 mA) • Optimum for high-frequency rectififi cation • Short reverse recovery time trr • Schottky Barrier Diodes in Series
描述与应用•肖特基势垒二极管(SBD) •硅外延平面型 •超高速开关 •低正向电压VF:<0.42 V(在IF= 100 mA时) •最佳为高频rectififi阳离子 •短的反向恢复时间trr •串联的肖特基二极管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MA3SD29FGL
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