集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 50mA |
截止频率fT
Transtion Frequency(fT) | 6Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 40~150 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon Planar RF Transistor Applications Wide band amplifier up to GHz range. Features High power gain High transition frequency Low noise figure |
| 描述与应用 | NPN硅平面RF晶体管 应用 宽频带放大器高达GHz范围内。 特点 高功率增益 高转换频率 低噪声系数 |