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  • Model：HN4A51J
  • Manufacturer：HUABAN
  • Date Code：12+ROHS
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：34
  • Package：SOT-153/SMV

V(BR) CBO

Collector-Base Voltage

  -120V

V(BR) CEO

Collector-Emitter Voltage

  -120V
Collector Current(IC)  -100MA/-0.1A
Transtion Frequency(fT)  100MHZ
DC Current Gain(hFE)  200~700

VCE(sat)

Collector-Emitter Saturation Voltage

  0.3V
Power Dissipation (Pd)  0.3W
Description & Applications  Features• TOSHIBA Transistor  Silicon PNP Epitaxial Type  (PCT Process)• High voltage : VCEO = −120V • High hFE : hFE = 200~700 • Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HN4A51J
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