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Parameters:

  • Model:RN2705JE
  • Manufacturer:HUABAN
  • Date Code:12+rohs 12+ROHS
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:YE
  • Package:SOT-553/ESV

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA/-0.1A
 Input Resistance(R1)  2.2KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  0.0468
DC Current Gain(hFE)  80
Transtion Frequency(fT)  200MHZ
Power Dissipation (Pd)  0.1W
Description & Applications  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) 
 
Switching, Inverter Circuit, Interface Circuit and 
Driver Circuit Applications. 
  Two devices are incorporated into an Extreme-Super-Mini (5 pin) 
package. 
 Incorporating a bias resistor into a transistor reduces parts count. 
Reducing the parts count enable the manufacture of ever more compact 
equipment and save assembly cost. 
 
Technical Documentation Download Read Online

 

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RN2705JE
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