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  • Model:2N7002-T1
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:702
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage 60V
最大栅源极电压Vgs(±) Gate-Source Voltage 20V
最大漏极电流Id Drain Current 115mA/0.115A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 7.5Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-2.5V
耗散功率Pd Power Dissipation 200mW/0.2W
Description & Applications N-Channel 60-V (D-S) MOSFET Features N-Channel 60-V (D-S) MOSFET Low On-Resistance: 2.5 ohm Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage
描述与应用 N沟道60-V(D-S)的MOSFET 特性 N沟道60-V(D-S)的MOSFET 低导通电阻2.5欧姆 低阈值:2.1 V 低输入电容:22 pF 开关速度快:7 NS 低输入和输出泄漏

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