集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 220~475 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −650mV/-0.65V |
耗散功率Pc
PoWer Dissipation | 150mW/0.15W |
| Description & Applications | General purpose transistors PNP silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. |
| 描述与应用 | 通用晶体管PNP硅 这些晶体管是专为通用放大器应用。他们被安置在SOT-323/SC-70这是专为低功率表面贴装应用。 |