| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
45V/-45V |
| 集电极连续输出电流IC Collector Current(IC) |
500mA/-500mA |
| 截止频率fT Transtion Frequency(fT) |
100MHz/80MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
160~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
700mV |
| 耗散功率Pc Power Dissipation |
600mW |
| Description & Applications |
Features • NPN/PNP general purpose double transistor • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Complementary driver • Half and full bridge driver. |
| 描述与应用 |
特点 •NPN/ PNP通用双晶体管 •高电流（500毫安） •600 mW的总功耗 •替换两个SOT23封装的晶体管相同的PCB面积。 应用 •通用开关和放大 •互补驱动器 •半桥和全桥驱动器 |