| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -35V/35V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -30V/30V |
| 集电极连续输出电流IC Collector Current(IC) | -500mA/500mA |
| 截止频率fT Transtion Frequency(fT) | 200MHz/300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 70~240 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -100mV/100mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Q1: • Excellent hFE linearity : hFE(2) =25 (Min.) at VCE = −6V IC = −400mA Q2: • Excellent hFE linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA • Excellent hFE Linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications |
| 描述与应用 | 特点 •东芝晶体管的硅PNP外延型（PCT工艺）硅NPN外延型（PCT工艺） Q1： •优秀的在HFE线性：HFE（2）=25（分钟）在VCE=6V IC=-400毫安 Q2： •出色的线性度：HFE HFE（2）=25（分钟）在VCE=6V IC =400毫安 •优秀的线性：HFE HFE（IC=-0.1毫安的）/ HFE（IC=-2毫安，）= 0.95（典型值） •音频通用放大器应用 |