| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 50 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating bias resistance into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to RN2102FV |
| 描述与应用 | 特性 开关电路，逆变电路，接口电路和驱动器电路应用 适合非常高密度安装超小型封装， 结合到晶体管偏压电阻减少部件的数量，所以能够制造比更紧凑设备并降低装配成本。 宽范围的电阻值是可使用在各种电路。 对管是RN2102FV |