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Parameters:

  • Model:TPCF8105
  • Manufacturer:HUABAN
  • Date Code:12+rohs 12+ROHS
  • Standard Package:4000
  • Min Order:10
  • Mark/silk print/code/type:F3E
  • Package:1206-8/vs-8/SOT23-8

最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.024Ω @-3A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5--1.2V
耗散功率Pd
Power Dissipation
2.5W
Description & Applications Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON)= 24 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA)
描述与应用 由于占地面积小,小而薄的封装 低漏源电阻RDS(ON)= 24m(典型值)(VGS=-4.5 V) 低漏电流:IDSS= -10μA(最大)(VDS=-20 V) 增强模式:VTH =-0.5〜-1.2 V(VDS=-10 V,ID=-0.5毫安)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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TPCF8105
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