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  • Model:BFG198
  • Manufacturer:HUABAN
  • Date Code:00+ 05+07NOPB400
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:BFG198
  • Package:SOT-223

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
8Ghz
直流电流增益hFE
DC Current Gain(hFE)
40~90
管压降VCE(sat)
Collector-Emitter Saturation Voltage
 
耗散功率Pc
Power Dissipation
700mW/0.7W
Description & Applications NPN 8 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
描述与应用 NPN8 GHz的宽带晶体管 说明 NPN平面外延晶体管的 塑料SOT223信封,意 宽带放大器应用。 该器件具有高增益和 出色的输出电压能力。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFG198
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