| Transistor Type |
PNP |
Collector-Base Voltage(VCBO) |
-30V |
Collector-Emitter Voltage(VCEO) |
-20V |
Collector Current(IC) |
-3.0A |
Transtion Frequency(fT) |
|
DC Current Gain(hFE) |
200~500 |
VCE（sat）
Collector-Emitter Saturation Voltage |
-0.19V |
| MOSFET TYPF |
P Channel MOS |
Vds
Drain-Source Voltage |
-20V |
Vgs(±)
Gate-Source Voltage |
±8V |
Drain Current(ID) |
-2.0A |
Rds(on)
FET Drain-Source On-State Resistance |
ID = −1.0 A, VGS = −4 V RDS=90~130mΩ
ID = −0.5 A, VGS = −2.5 V RDS=124~186mΩ
ID = −0.2 A, VGS = −1.8V RDS=180~320mΩ
|
Vgs（th）
Gate-Source Threshold Voltage |
-0.3~1.0V |
Power Dissipation(PD_ |
0.94W |
Description & Applications |
Transistor Silicon PNP Epitaxial Type／Field Effect Transistor Silicon P Channel MOS Type
○ Switching Applications
• Multi-chip discrete device: PNP Transistor and Ｐ Channel MOS FET
• Small footprint due to small and thin package
|