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Parameters:

  • Model:TPCP8G01
  • Manufacturer:HUABAN
  • Date Code:09+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:8G01
  • Package:PS-8

 

 Transistor Type  PNP

Collector-Base Voltage(VCBO)
 -30V

Collector-Emitter Voltage(VCEO)
 -20V

Collector Current(IC)
 -3.0A

Transtion Frequency(fT)
 

DC Current Gain(hFE)
 200~500
VCE(sat)
Collector-Emitter Saturation Voltage
 -0.19V
 MOSFET TYPF  P Channel MOS
Vds
Drain-Source Voltage
 -20V
Vgs(±)
Gate-Source Voltage
 ±8V

Drain Current(ID)
 -2.0A
Rds(on)
FET Drain-Source On-State Resistance
 ID = −1.0 A, VGS = −4 V RDS=90~130mΩ
ID = −0.5 A, VGS = −2.5 V RDS=124~186mΩ
ID = −0.2 A, VGS = −1.8V RDS=180~320mΩ
Vgs(th)
Gate-Source Threshold Voltage
  -0.3~1.0V

Power Dissipation(PD_
 0.94W

Description & Applications

 Transistor Silicon PNP Epitaxial Type/Field Effect Transistor Silicon P Channel MOS Type 
○ Switching Applications 
 • Multi-chip discrete device: PNP Transistor and P Channel MOS FET 
• Small footprint due to small and thin package 
 

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TPCP8G01
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