| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC Collector Current(IC) |
50mA |
| 基极输入电阻R1 Input Resistance(R1) |
10kΩ |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47kΩ |
| 电阻比(R1/R2) Resistance Ratio |
0.213 |
| 直流电流增益hFE DC Current Gain(hFE) |
120 |
| 截止频率fT Transtion Frequency(fT) |
|
| 耗散功率Pc Power Dissipation |
50mW |
| Description & Applications |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor). * Switching Applications. * Inverter Circuit Applications. * Interface Circuit Applications . * Driver Circuit Applications. * Incorporating a bias resistor into a transistor reduces the number of parts, which enable the manufacture of ever more compact equipment and saves assembly cost. |
| 描述与应用 |
东芝晶体管NPN硅外延式（PCT程序）（偏置电阻内置晶体管）。 *开关应用。 *逆变器电路应用。 *接口电路应用。 *驱动器电路应用。 *结合成晶体管的偏置电阻器的数量减少 部分，这使制造的更加紧凑的 设备和节省组装成本。 |