最大源漏极电压Vds
Drain-Source Voltage |
-20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
最大漏极电流Id
Drain Current |
-12A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance |
25mΩ@ VGS = -4.5V, ID = -5.9A |
开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4V~-1V |
耗散功率Pd
Power Dissipation |
3.5W |
| Description & Applications |
P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices |
| 描述与应用 |
P沟道20-V（D-S）的MOSFET 特点 •TrenchFET®功率MOSFET •新型的热增强型PowerPAK®SC-70封装 - 小占位面积 - 低导通电阻 应用 •负载开关，PA开关，用于便携式设备的开关和电池开关 |