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  • Model:2SD1222
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:700
  • Min Order:10
  • Mark/silk print/code/type:D1222
  • Package:TO-252

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
40V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
 
直流电流增益hFE
DC Current Gain(hFE)
1000~2000
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1.5V
耗散功率Pc
Power Dissipation
1W
Description & Applications TOSHIBA Transistor Silicon NPN Epitaxial Type. Switching Applications . Hammer Drive, Pulse Motor Drive Applications. Power Amplifier Applications. High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) . Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A) . Complementary to 2SB907.
描述与应用 东芝晶体管NPN硅外延型。 切换应用程序。 锤驱动器,脉冲电机驱动应用。 功率放大器应用。 高直流电流增益:HFE=2000(分钟)(VCE= 2 V,IC= 1 A)。 低饱和电压VCE(sat)=1.5 V(最大值)(IC= 2)。 2SB907互补。

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