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  • Model:STB1188LDM
  • Manufacturer:HUABAN
  • Date Code:03+ 03+
  • Standard Package:1000
  • Min Order:1
  • Mark/silk print/code/type:ZBLY
  • Package:SOT-223

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−32V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
 
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−800mV/-0.8V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & Applications PNP Silicon Transistor Description • Medium power amplifier Features • PC(Collector dissipation)=2W • Low collector saturation voltage • Complementary pair with STD1766
描述与应用 PNP硅晶体管 描述 •中等功率放大器 特点 •PC(集电极耗散)= 2W •低集电极饱和电压 •互补配对STD1766

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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STB1188LDM
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