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Parameters:

  • Model:DMN5L06DWK-7
  • Manufacturer:HUABAN
  • Date Code:12+ROHS
  • Standard Package:3000
  • Min Order:1
  • Mark/silk print/code/type:DABZ4
  • Package:SOT-363/SC70-6

Drain-Source Voltage (Vds)  50V

Vgs(±)

Gate-Source Voltage

 20V
Drain Current  (Id)  305MA

Rds(on)

Drain-Source On-State Resistance

 VGS = 5.0V, ID = 50mA 2Ω

Vgs(th)

Gate-Source Threshold Voltage

 VDS = VGS, ID = 250uA 1.2v
Power Dissipation  (Pd)  200MW
Description & Applications  Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV"Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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DMN5L06DWK-7
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