| Drain-Source Voltage (Vds) |
50V |
|
Vgs(±)
Gate-Source Voltage
|
20V |
| Drain Current （Id） |
305MA |
|
Rds(on)
Drain-Source On-State Resistance
|
VGS = 5.0V, ID = 50mA 2Ω |
|
Vgs(th)
Gate-Source Threshold Voltage
|
VDS = VGS, ID = 250uA 1.2v |
| Power Dissipation (Pd) |
200MW |
| Description & Applications |
Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV"Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability |
| Technical Documentation Download |
Read Online |