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  • Model:2N7002E
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:P2E
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage 60V
最大栅源极电压Vgs(±) Gate-Source Voltage 30V
最大漏极电流Id Drain Current 385mA/0.385A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 0.78Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-2.5V
耗散功率Pd Power Dissipation 830mW/0.83W
Description & Applications SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small surface mounting type. (SC-70/SOT-323) High density cell design for low RDS(ON). Suitable for high packing density.
描述与应用 表面贴装 N沟道增强型场效应晶体管 特性 N沟道增强型场效应晶体管 小型表面贴装型。 (SC-70/SOT-323) 高密度单元设计的低漏源导通电阻)。 适用于高包装密度。

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