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Parameters:

  • Model:2N7002TA
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:702
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage40V
最大漏极电流Id Drain Current115mA/0.115A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance7.5Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.5V
耗散功率Pd Power Dissipation330mW/0.33W
Description & Applications60V SOT23 N-channel enhancement mode MOSFET Description A small signal MOSFET for general purpose switching applications. Features 60V SOT23 N-channel enhancement mode MOSFET Fast switching speed Low gate drive capability SOT23 package
描述与应用60V SOT23 N沟道增强型MOSFET 描述 小信号MOSFET通用开关应用。 特性 60V SOT23 N沟道增强型MOSFET 开关速度快 低栅极驱动能力 SOT23封装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2N7002TA
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