集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -180V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -160V |
集电极连续输出电流IC
Collector Current(IC) | -140mA/-0.14A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 140~280 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -140mV/-0.14V |
耗散功率Pc
PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP/NPN epitaxial planar silicon transistors High-voltage switching Predriver applications adoption of FBET process； high breakdown voltage ； excellent linearity of hFE and small Cob； fast switching speed |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高压开关 预驱动器应用 采纳的FBET过程; 击穿电压高; 卓越的HFE线性度; 开关速度快 |