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Parameters:

  • Model:2SA2011
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:AR
  • Package:SOT-89/PCP/SC-62

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-12V
集电极连续输出电流IC
Collector Current(IC)
-6A
截止频率fT
Transtion Frequency(fT)
350MHz
直流电流增益hFE
DC Current Gain(hFE)
200~560
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-180mV/-0.18V
耗散功率Pc
PoWer Dissipation
3.5W
Description & ApplicationsPNP Silicon epitaxial Transistor For DC-DC converter applications Applications Relay drivers, lamp drivers, motor drivers, strobes. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim. High allowable power dissipation.
描述与应用PNP硅外延晶体管 DC-DC转换器应用 应用 继电器驱动器,灯驱动器,电机驱动器,闪光灯。 特点 通过MBIT流程。 大电流容量。 低集电极 - 发射极饱和电压。 高速开关。 集小型和超薄超小尺寸封装允许应用。 高允许功耗。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SA2011
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