集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | −10A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 130~260 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −600mV/-0.6V |
耗散功率Pc
PoWer Dissipation | 1.3W |
| Description & Applications | PNP Silicon epitaxial planar transistor For low-voltage switching Complementary to 2SD1752A Features Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
| 描述与应用 | PNP硅外延平面晶体管 对于低电压开关 补充2SD1752A 特点 低集电极到发射极饱和电压VCE（SAT） 高速开关 I型包可以直接焊接在印刷电路板等小型电子设备的散热片。 |