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Parameters:

  • Model:2SB1189-R
  • Manufacturer:HUABAN
  • Date Code:05+1r04nopb 05+rohs
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:BDR
  • Package:SOT-89/SC-62/MPT

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−80V
集电极连续输出电流IC
Collector Current(IC)
-700mA/-0.7A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
120~390
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor Medium power Transistor Features 1) High breakdown voltage 2) Complements the 2SD1767
描述与应用PNP硅外延平面晶体管 中等功率晶体管 特点 1)高的击穿电压 2)补充2SD1767

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1189-R
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